PART |
Description |
Maker |
BFP620FE7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in flatlead package TSFP-4
|
Infineon
|
2SB1143S 2SB1143T 2SD1683S |
Bipolar Transistor Bipolar Transistor Bipolar Transistor (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single TO-126ML
|
ON Semiconductor
|
IRGBC20FD2 |
600V Copack IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier Vectron International, Inc.
|
IRGBC30U |
600V Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
2SD1816S-TL-E 2SD1816S-H 2SD1816S-E 2SD1816S-TL-H |
Bipolar Transistor Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
|
ON Semiconductor
|
IRGIH50F |
1200V DISCRETE Hi-Rel IGBT in a TO-259AA package INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
2N5664SMD |
NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS
|
SEME-LAB[Seme LAB]
|
IRGP20B120U-E |
1200V UltraFast 5-40 kHz Single IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
IRG4PH40U |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AC INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条) INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A) 1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp. IRF[International Rectifier]
|